Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

From LabAdviser
Knil (talk | contribs)
No edit summary
Knil (talk | contribs)
No edit summary
Line 14: Line 14:
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! General description
|
| E-beam deposition of Pd
*Up to 1x4" wafers
*smaller pieces
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
Line 32: Line 30:
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
|
*Up to 1x4" wafers
*smaller pieces
|-
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
|
Line 41: Line 46:
* SU-8  
* SU-8  
* Metals  
* Metals  
|-style="background:Lightgrey; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|

Revision as of 15:22, 25 March 2014

Feedback to this page: click here


Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel)
General description E-beam deposition of Pd
Pre-clean RF Ar clean
Layer thickness 10Å to 1µm*
Deposition rate 2Å/s to 10Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment

* For thicknesses above 200 nm permission is requested.