Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | |Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | ||
|Oxidation of very thick oxides, thickness higher than 4 µm. | |Oxidation of very thick oxides, thickness higher than 4 µm. | ||
|Oxidation and annealing | |Oxidation and annealing of almost materials on silicon wafer. | ||
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*All wafers have to be RCA cleaned. Except for wafers from EVG-NIL and PECVD3. | *All wafers have to be RCA cleaned. Except for wafers from EVG-NIL and PECVD3. | ||
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Only new wafers | |||
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Almost all meterials | |||
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