Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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|Oxidation of gate-oxide and other especially clean oxides. | |Oxidation of gate-oxide and other especially clean oxides. | ||
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | |Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | ||
|Oxidation and annealing of wafers from the LPCVD furnaces and PECVD1 | |Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1. | ||
|Oxidation and annealing of wafers from NIL. | |Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | ||
|Oxidation of very thick oxides | |Oxidation of very thick oxides, thickness higher than 4 µm. | ||
|Oxidation and annealing for all materials. | |Oxidation and annealing for all materials. | ||
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