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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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! Dry oxidation
! Dry oxidation
|x||x||x (with special permission)||x||x||
|x||x||x (with special permission)||x||x||.
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!wet oxidation with torch (H2+O2)
!wet oxidation with torch (H2+O2)
|x||x||||||||
|x||x||.||.||.||.
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!Wet oxidation with bubler (water steam + N2)
!Wet oxidation with bubler (water steam + N2)
|||||x (with special permission)||x||x||x
|.||.||x (with special permission)||x||x||x
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!Process temperature
!Process temperature
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!Cleanliness of dry oxide (rated 1-4, 1 is best)
!Cleanliness of dry oxide (rated 1-4, 1 is best)
|2||2||1||3||4||
|2||2||1||3||4||.
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!Cleanliness of wet oxide (rated 1-4, 1 is best)
!Cleanliness of wet oxide (rated 1-4, 1 is best)
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| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x
| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x
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| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||
| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||.
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| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||||||||
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||.||.||.||.
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| Wafers directly from PECVD1||||||||x||x||
| Wafers directly from PECVD1||.||.||.||x||x||.
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| Wafers directly from NIL bonding||||||||||x||
| Wafers directly from NIL bonding||.||.||.||.||x||.
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