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| ==Comparison of the methods for deposition of Silicon Oxide== | | ==Comparison of the methods for deposition of Silicon Oxide== |
| {| border="1" cellspacing="0" cellpadding="4" align="center"
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| !
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| ! LPCVD (TEOS)
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| ! PECVD
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| ! Sputter technique [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|(PVD co-sputter/evaporation tool)]]
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| !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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| |- valign="top" align="left"
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| | Stochiometry
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| *SiO<sub>2</sub>
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| Can be doped with boron
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| *Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
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| Can be doped with boron, phosphorus or germanium
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| *Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
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| *Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
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| |-valign="top" align="left"
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| |Film thickness
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| *~300nm - 4µm
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| *~40nm - 30µm
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| *Thin layers (up to 300-400 nm)
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| *~10nm - ~1µm(>2h)
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| |- valign="top" align="left"
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| |Process Temperature
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| *725 <sup>o</sup>C
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| *300 <sup>o</sup>C
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| *Can be between room temp. and 400 <sup>o</sup>C
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| *Expected to be below 100<sup>o</sup>C
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| |- valign="top" align="left"
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| |Step coverage
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| *Excelent. Very high surface mobility.
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| *Less good
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| *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation.
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| *
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| |Not Known
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| |- valign="top" align="left"
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| |Film quality
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| *Less than thermal oxide. Annealing makes it more dense.
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| *Few defects
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| *Less dense film
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| *Incorporation of hydrogen in the film
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| *
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| *
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| |- valign="top" align="left"
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| |Batch size
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| *1-13 4" wafer per run
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| *deposition on both sides of the substrate
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| *1-3 4" wafers or 1 6" wafer or many smaller chips per run
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| *deposition on one side of the substrate
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| *1-12 4" wafers or 1-4 6" wafer or many smaller chips per run
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| *Deposition time for 1 and 3 wafers is the same
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| *1 50mm wafer
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| *1 100mm wafer
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| *1 150mm wafer
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| *1 200mm wafer
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| *Smaller pieces can be mounted with capton tape
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| |- valign="top" align="left"
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| | Substrate material allowed
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| *Silicon wafers
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| **with layers of silicon oxide or silicon (oxy)nitride
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| *Quartz wafers
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| *Silicon
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| **with layers of silicon oxide or silicon (oxy)nitride
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| *Quartz
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| *Small amount of metal (in PECVD3)
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| *Silicon
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| **with layers of silicon oxide or silicon (oxy)nitride
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| *Quartz
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| *Metals
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| *Almost any materials
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| *not Pb and very poisonous materials
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| |-
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| |}
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| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" |
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