Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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BHF is mostly used to do pretreatment step for new Si wafers. The native dioxide layer will be removed during 30 sec etching and in this way we will promote the resist adhesion on the Si substrates. We recommend to spin resist asap after the procedure. | BHF is mostly used to do pretreatment step for new Si wafers. The native dioxide layer will be removed during 30 sec etching and in this way we will promote the resist adhesion on the Si substrates. We recommend to spin resist asap after the procedure. | ||
'''The user manual, user APV, and contact information can be found in LabManager:''' | |||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=64 Buffered HF-Clean in LabManager] | |||
===Process information=== | |||
For more information on this BHF bath take a look here: | For more information on this BHF bath take a look here: | ||
[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | ||