Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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-The thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen.
+==Oxidation==
+At Danchip we have 6 furnaces for oxidation: A1,A3,C1,C2,C3 and D1. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and ?
+If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen.
+*Dry oxide is used from 5nm - 200nm. Can be grown in furnaces:A1,A3,C1,C2,C3.
+*Wet oxide with O2 and H2 can be grown in furnace:A1,A3.
+*Wet oxide with H2O in a bobler can be grown in furnaces:C1,C2,C3.
-Dry oxide is used from 5nm - 200nm.
-Furnace:A1,A3,C1,C2,C3.
-Wet oxide with O2 and H2:
-Furnace:A1,A3.
-Wet oxide H2O in a bobler:
-Furnace:C1,C2,C3.
-The film quality of dry oxide is better than for wet oxide with regards to density and ?
+==Comparing the 6 oxidation furnaces==
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