Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
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! HF | ! HF | ||
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|'''General description''' | |'''General description''' | ||
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Used for removal of oxide generated in RCA1 and RCA2 | Used for removal of oxide generated in RCA1 and RCA2 | ||
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|-style="background:LightGrey; color:black" | |||
|'''Chemical solution''' | |'''Chemical solution''' | ||
|H<sub>2</sub>O, NH<sub>4</sub>OH(25-29%) and H<sub>2</sub>O<sub>2</sub>(30%) (5:1:1) | |H<sub>2</sub>O, NH<sub>4</sub>OH(25-29%) and H<sub>2</sub>O<sub>2</sub>(30%) (5:1:1) | ||
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|5% HF | |5% HF | ||
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|-style="background:WhiteSmoke; color:black" | |||
|'''Process temperature''' | |'''Process temperature''' | ||
|70-80 <sup>o</sup>C | |70-80 <sup>o</sup>C | ||
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|Room temperature | |Room temperature | ||
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|-style="background:LightGrey; color:black" | |||
|'''Process time''' | |'''Process time''' | ||
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30 sec. | 30 sec. | ||
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|-style="background:WhiteSmoke; color:black" | |||
|'''Life time of the chemical solutions''' | |'''Life time of the chemical solutions''' | ||
|Can only be heated one time. When hot: it lasts for ~1h | |Can only be heated one time. When hot: it lasts for ~1h | ||
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|~2 months | |~2 months | ||
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|-style="background:LightGrey; color:black" | |||
|'''Allowed materials''' | |'''Allowed materials''' | ||
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*Silicon nitride | *Silicon nitride | ||
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|-style="background:WhiteSmoke; color:black" | |||
|'''Batch size''' | |'''Batch size''' | ||
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1-25 2",4" or 6" wafers at a time | 1-25 2",4" or 6" wafers at a time | ||
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|-style="background:LightGrey; color:black" | |||
|'''Size of substrate''' | |'''Size of substrate''' | ||
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