Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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The thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is | The thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | ||
Dry oxide is used from 5nm - 200nm. | Dry oxide is used from 5nm - 200nm. | ||
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Furnace:C1,C2,C3. | Furnace:C1,C2,C3. | ||
The | The film quality of dry oxide is better than for wet oxide with regards to density and ? | ||
{| {{table}} border="1" cellspacing="0" cellpadding="8" | {| {{table}} border="1" cellspacing="0" cellpadding="8" | ||
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|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4" | |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4" | ||
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! Which wafers are allowed to enter the furnace: | !Which wafers are allowed to enter the furnace: | ||
||||||||||| | | align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | ||
| align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | |||
| align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | |||
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | |||
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | |||
| align="center" style="background:#f0f0f0;"|'''D1 APOX''' | |||
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| New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x | | New clean* Si wafers 4" (6" in C1)||x||x||x (with special permission)||x||x||x | ||