Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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Removal of native oxide is a part of the RCA cleaning procedure. See the RCA page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the oxide etch page for more details.

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	Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page for more details.		Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please, see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page for more details.