Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

| General describtion||Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ionimplanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ionimplanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6\" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides

| Dry oxidation||x||x||x (with special permission)||x||x||

| wet oxidation with torch (H2+O2)||x||x||||||||

| Wet oxidation with bubler (water steam + N2)||||||x (with special permission)||x||x||x

| Process temperature||800-1150 C||800-1150 C||800-1150 C||800-1150 C||800-1150 C||1150 C

| Cleanliness of dry oxide (rated 1-4, 1 is best)||2||2||1||3||4||

| Cleanliness of wet oxide (rated 1-4, 1 is best)||1||1||2||3||4||3

| Batch size||max. 30 wafers of 4\" or 2\"||max. 30 4\" wafers or 2\" wafers||max. 30 wafers of 6\",4\" or 2\"||max. 30 4\" wafers or 2\" wafers||max. 30 4\" wafers or 2\" wafers||?50-75

| Which wafers are allowed to enter the furnace: ||||||||||||

| New clean* Si wafers 4\" (6\" in C1)||x||x||x (with special permission)||x||x||x