Specific Process Knowledge/Thermal Process/Oxidation

The thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is choosen.

Dry oxide is used from 5nm - 200nm. Furnace:A1,A3,C1,C2,C3.

Wet oxide with O2 and H2: Furnace:A1,A3.

Wet oxide H2O in a bobler: Furnace:C1,C2,C3.

The filmquality of dryoxide is better than for wet oxide with regards to density and ?

'	A1 Boron drive-in	A3 Phosphorous drive-in	C1 Gate oxide	C2 Anneal oxide	C3 Anneal bond	D1 APOX
General describtion	Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ionimplanted boron. Can also be used for dry and wet oxidation.	Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ionimplanted phosphorous. Can also be used for dry and wet oxidation.	Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6\" wafers.	Oxidation and annealing of wafers from the B-stack and PECVD1.	Oxidation and annealing of wafers from NIL.	Oxidation of very thick oxides
Dry oxidation	x	x	x (with special permission)	x	x
wet oxidation with torch (H2+O2)	x	x
Wet oxidation with bubler (water steam + N2)			x (with special permission)	x	x	x
Process temperature	800-1150 C	800-1150 C	800-1150 C	800-1150 C	800-1150 C	1150 C
Cleanliness of dry oxide (rated 1-4, 1 is best)	2	2	1	3	4
Cleanliness of wet oxide (rated 1-4, 1 is best)	1	1	2	3	4	3
Batch size	max. 30 wafers of 4\" or 2\"	max. 30 4\" wafers or 2\" wafers	max. 30 wafers of 6\",4\" or 2\"	max. 30 4\" wafers or 2\" wafers	max. 30 4\" wafers or 2\" wafers	?50-75
Which wafers are allowed to enter the furnace:
New clean* Si wafers 4\" (6\" in C1)	x	x	x (with special permission)	x	x	x
RCA clean** Si wafers with no history of Metals on	x	x	x (with special permission)	x	x
From Predep furnace directly (e.g. incl. Predep HF**)	From A2	From A4
Wafers directly from PECVD1				x	x
Wafers directly from NIL bonding					x