Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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!style="background:silver; color:black;" align="center" width="60"|Purpose | !style="background:silver; color:black;" align="center" width="60"|Purpose | ||
|style="background:LightGrey; color:black"|Dry etch of | |style="background:LightGrey; color:black"|Dry etch of | ||
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*Silicon | *Silicon | ||
*Silicon oxide | *Silicon oxide | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"|Etch rates | |style="background:LightGrey; color:black"|Etch rates | ||
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*Silicon: ~0.04-0.8 µm/min | *Silicon: ~0.04-0.8 µm/min | ||
*Silicon oxide: ~0.02-0.15 µm/min | *Silicon oxide: ~0.02-0.15 µm/min | ||
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|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||
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*Can vary from isotropic to anisotropic with vertical | *Can vary from isotropic to anisotropic with vertical | ||
:sidewalls and on to a physical etch where the sidewalls | :sidewalls and on to a physical etch where the sidewalls | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Max pressure | |style="background:LightGrey; color:black"|Max pressure | ||
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*800 mTorr | *800 mTorr | ||
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|style="background:LightGrey; color:black"|Max R.F. power | |style="background:LightGrey; color:black"|Max R.F. power | ||
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*600 W | *600 W | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
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*SF<sub>6</sub>: 0-52 sccm | *SF<sub>6</sub>: 0-52 sccm | ||
*O<sub>2</sub>: 0-99 sccm | *O<sub>2</sub>: 0-99 sccm | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*1 4" wafer | *1 4" wafer | ||
*1 2" wafer (use Al carrier with Si dummy wafer) | *1 2" wafer (use Al carrier with Si dummy wafer) | ||
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| style="background:LightGrey; color:black"|Allowed materials | | style="background:LightGrey; color:black"|Allowed materials | ||
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*Silicon | *Silicon | ||
*Silicon oxide (with boron, phosphorous and germanium) | *Silicon oxide (with boron, phosphorous and germanium) | ||