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!Results  
!Results  
!Test on wafer with 50% load (Travka 50), by BGHE @danchip
!Test on wafer with 50% load (Travka 50), by BGHE @danchip
!100% load on 100mm wafers with Barc and KRF (no mask)
|-
|-
|Etch rate of thermal oxide
|Etch rate of thermal oxide
|'''44.1 nm/min (50% etch load) (01-02-2014)'''  
|'''44.1 nm/min (50% etch load) (01-02-2014)'''  
|
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
|'''~0.9'''
|'''~0.9''' (SiO2:resist)
|'''~1.25:1 (Barc:KRF)
|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|'''±1.6% (01-02-2014)'''
|'''±1.6% (01-02-2014)'''
|
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|Take a look at the images but be aware that the resist profile was not good to begin with.
|Take a look at the images but be aware that the resist profile was not good to begin with.
|
|-
|-
|Wafer uniformity map (click on the image to view a larger image)
|Wafer uniformity map (click on the image to view a larger image)
|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|center|thumb|Contour plot of the etch rate over the wafer, 9 points measured]]  
|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|center|thumb|Contour plot of the etch rate over the wafer, 9 points measured]]  
|
|-
|-
|SEM profile images
|SEM profile images
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image:ICP_metal_slow_s4075_sio2_6.jpg|Resist profiler after etch 01-02-2014. No line width reduction observed.  
image:ICP_metal_slow_s4075_sio2_6.jpg|Resist profiler after etch 01-02-2014. No line width reduction observed.  
  </gallery>  
  </gallery>  
 
|
 
|-
|Etch rate in barc
|
|50 nm/min (2014-09-09)
|-
|Etch rate in KRF resist
|40 nm/min (2014-09-09)
|-
|-
|}
|}


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