Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
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===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess === | ===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess === | ||
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. | This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. | ||
Revision as of 08:28, 21 February 2014
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Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on wafer with 20% load, by Izzet Yildiz @Nanotech |
|---|---|
| Etch rate of LPCVD nitride | 60-65 nm/min (20% etch load) (Feb. 2014) |
| Selectivity to resist [SiN : AZ resist] | 1:0.75 |
| Wafer uniformity (100mm) | ? |
| Profile [o] | ? |
| Wafer uniformity map (click on the image to view a larger image) | not measured |
| SEM profile images | Not measured |