Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 9 points measured]] | |[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 9 points measured]] | ||
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| | |SEM profile images | ||
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<gallery caption="Some chemicals of the MVD and the surface reaction" widths="200px" heights="150px" perrow="3"> | |||
image:ICP_metal_resist_no_etch_s4075_2.jpg|Resist profile before etch | |||
image:ICP_metal_slow_s4075_sio2_4.jpg|Resist profiler after etch 01-02-2014. | |||
image:ICP_metal_slow_s4075_sio2_6.jpg|Resist profiler after etch 01-02-2014. No line width reduction observed. | |||
</gallery> | |||
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Revision as of 10:18, 17 February 2014
Slow etch of SiO2 with resist as masking material - with direct clamping 
This recipe can be used for slow etching of SiO2 with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer. Here are some test results presented.
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on maskless wafer |
|---|---|
| Etch rate of thermal oxide | 44.1 nm/min (50% etch load) (01-02-2014) |
| Selectivity to resist [:1] | ~0.9 |
| Wafer uniformity (100mm) | ±1.6% (01-02-2014) |
| Profile [o] | Take a look at the images but be aware that the resist profile was not good to begin with. |
| Images (click on the image to view a larger image) |  |
| SEM profile images |
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