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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 9 points measured]]  
|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 9 points measured]]  
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<gallery caption="Some chemicals of the MVD and the surface reaction" widths="200px" heights="150px" perrow="3">
image:ICP_metal_resist_no_etch_s4075_2.jpg|Resist profile before etch
image:ICP_metal_slow_s4075_sio2_4.jpg|Resist profiler after etch 01-02-2014.
image:ICP_metal_slow_s4075_sio2_6.jpg|Resist profiler after etch 01-02-2014. No line width reduction observed.
</gallery>
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