Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
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|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||
Revision as of 09:44, 17 February 2014
Slow etch of SiO2 with resist as masking material - with direct clamping 
This recipe can be used for slow etching of SiO2 with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer. Here are some test results presented.
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on maskless wafer |
|---|---|
| Etch rate of thermal oxide | 44.1 nm/min (50% etch load) (01-02-2014) |
| Selectivity to resist [:1] | ~0.9 |
| Wafer uniformity (100mm) | ±1.6% (01-02-2014) |
| Profile [o] | Take a look at the iamges but be aware the the resist profile was not good to begin with. |
| Images (click on the image to view a larger image) |  |
| Comments |