Jump to content

Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

Bghe (talk | contribs)
Created page with "===Slow etch of SiO2 with resist as masking material - with direct clamping 70px === This recipe can be used for slow etching of SiO2..."
 
Bghe (talk | contribs)
Line 45: Line 45:
|-
|-
|Images (click on the image to view a larger image)
|Images (click on the image to view a larger image)
|[[image:AOE_slow_contour_plot1.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 5 points measured]]  
|[[image:ICP_metal_slow_wafer_uniformity_s4075.jpg|275x275px|right|thumb|Contour plot of the etch rate over the wafer, 9 points measured]]  
|-
|-
|Comments
|Comments