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| ![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | | ![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] |
| ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] |
| ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
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| *Anisotropic etch: vertical sidewalls | | *Anisotropic etch: vertical sidewalls |
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| *Primarily for pure physical etch by sputtering with Ar-ions
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| *Aluminium | | *Aluminium |
| *Chromium (Please try to avoid this) | | *Chromium (Please try to avoid this) |
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| *Any material that is accepted in the machine
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| *Tested range: ~230nm/min - ~550nm/min | | *Tested range: ~230nm/min - ~550nm/min |
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| *Process dependent
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| *Tested once ~22nm/min
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| !Substrate size | | !Substrate size |
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| *<nowiki>#</nowiki>1-25 100mm wafers in our 100mm bath
| | hmds |
| *What can be fitted in a plastic beaker
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| *As many small samples as can be fitted on the 100mm carrier.
| | bhf |
| *<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
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| *<nowiki>#</nowiki>1 150mm wafer (only RIE2 when set up for 150mm)
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| *As many small samples as can be fitted on a 100mm wafer
| | 250c |
| *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
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| *<nowiki>#</nowiki>1 100 mm wafer
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| *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
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| *As many samples as can be securely fitted on a up to 200mm wafer
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| *<nowiki>#</nowiki>1 50 mm wafer with special carrier
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| *<nowiki>#</nowiki>1 100 mm wafer with special carrier
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| *<nowiki>#</nowiki>1 150 mm wafers with special carrier
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| *<nowiki>#</nowiki>1 200 mm wafer
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| |-style="background:WhiteSmoke; color:black" | | |-style="background:WhiteSmoke; color:black" |
| !Allowed materials | | !Allowed materials |
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| In the dedicated bath:
| | hmds |
| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *Blue film
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| In a plastic beaker:
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| *No limits cross contamination wise
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| *Silicon
| | bhf |
| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *DUV resist
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| *E-beam resist
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| *Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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| *Quartz/fused silica
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *DUV resist
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| *E-beam resist
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| *Aluminium
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| *Chromium (try to avoid it)
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| *Quartz/fused silica
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| *Silicon
| | 250c |
| *Silicon oxides
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| *Silicon (oxy)nitrides
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| *Metals from the +list
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| *Metals from the -list
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| *Alloys from the above list
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| *Stainless steel
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| *Glass
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| *III-V materials
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| *Resists
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| *Polymers
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| *Capton tape
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| |- | | |- |
| |} | | |} |
