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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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==Comparing pretreatment methods==
==Comparing pretreatment methods==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide etch (BHF/HF)]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|
*Isotropic etch
|
*Anisotropic etch: vertical sidewalls
|
*Anisotropic etch: vertical sidewalls
|
*Primarily for pure physical etch by sputtering with Ar-ions
|-
|-
|-style="background:LightGrey; color:black"
!Possible masking materials
|
*Photoresist
*PolySilicon
*Silicon nitride (LPCVD)
*Blue film
*Cr/Au for deeper etches (plastic beaker)
|
*Photoresist
*DUV resist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!)
|
*Photoresist
*DUV resist
*E-beam resist
*Silicon Oxide
*Silicon Nitride
*Aluminium
*Chromium (Please try to avoid this)
|
*Any material that is accepted in the machine
|-
|-
|-style="background:WhiteSmoke; color:black"
!Etch rate range
|
*~75 nm/min (Thermal oxide) in BHF
*~90 nm/min (Thermal oxide) in SIO Etch
*~25 nm/min (Thermal oxide) in 5%HF
*~3-4µm/min in 40%HF
|
*Process dependent
*Tested range: ~20nm/min - ~120nm/min
|
*Process dependent
*Tested range: ~230nm/min - ~550nm/min
|
*Process dependent
*Tested once ~22nm/min
|-
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
*<nowiki>#</nowiki>1-25 100mm wafers in our 100mm bath
*What can be fitted in a plastic beaker
|
*As many small samples as can be fitted on the 100mm carrier.
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier)
*<nowiki>#</nowiki>1 150mm wafer (only RIE2 when set up for 150mm)
|
*As many small samples as can be fitted on a 100mm wafer
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer
*<nowiki>#</nowiki>1 100 mm wafer
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm)
|
*As many samples as can be securely fitted on a up to 200mm wafer
*<nowiki>#</nowiki>1 50 mm wafer with special carrier
*<nowiki>#</nowiki>1 100 mm wafer with special carrier
*<nowiki>#</nowiki>1 150 mm wafers with special carrier
*<nowiki>#</nowiki>1 200 mm wafer
|-
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
In the dedicated bath:
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*Blue film
In a plastic beaker:
*No limits cross contamination wise
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*DUV resist
*E-beam resist
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Quartz/fused silica
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*DUV resist
*E-beam resist
*Aluminium
*Chromium (try to avoid it)
*Quartz/fused silica
|
*Silicon
*Silicon oxides
*Silicon (oxy)nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|}
<br clear="all" />


=HMDS=
=HMDS=
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