Specific Process Knowledge/Etch/Wet Aluminium Etch

Wet Aluminium Etch

Wet Aluminium Etch: Positioned in cleanroom 4

Wet etching of aluminium is done with two different solutions:

1. H$_{2}$O:H$_{3}$PO$_{4}$ 1:2 at 50 ^oC
2. Pre-mixed etch solution: PES 77-19-04 at 20 ^oC

Comparing the two solutions

	Aluminium Etch 1	Aluminium Etch 2
General description	Etch of pure aluminium	Etch of aluminium + 1.5% Si
Chemical solution	H$_{2}$O:H$_{3}$PO$_{4}$ 1:2	PES 77-19-04
Process temperature	50 oC	20 oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist