Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>. | In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>. | ||
== The DRIE Pegasus at Danchip == | |||
[[Image:DRIE-Pegasus.jpg |300x300px|thumb|The SPTS Pegasus in the Danchip cleanroom A-1]] | |||
'''The Bosch process''' | |||
The DRIE Pegasus is a state-of-art silicon dry etcher that offers outstanding performance in terms of etch rate, uniformity etc. It uses the so-called Bosch process to achieve excellent control of the etched features. Click [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/System-description|here]] for more fundamental information of the system. | |||
'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:''' | |||
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=265| LabManager] | |||
==Process information== | ==Process information== | ||