Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== | ==Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide== | ||
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! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ||
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! AOE | ! AOE | ||
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|General description | |'''General description''' | ||
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*Isotropic etch | *Isotropic etch | ||
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*Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | *Anisotropic etch: vertical sidewalls, especially good for deep etch and high aspect ratio etch | ||
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|Possible masking materials | |'''Possible masking materials''' | ||
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*Photoresist | *Photoresist | ||
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*Aluminium | *Aluminium | ||
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|Etch rate | |'''Etch rate''' | ||
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~75 nm/min (Thermal oxide) in BHF | *~75 nm/min (Thermal oxide) in BHF | ||
~90 nm/min (Thermal oxide) in SIO Etch | *~90 nm/min (Thermal oxide) in SIO Etch | ||
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | ||
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*Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | *Typically 200-600 nm/min can be increased or decreased by using other recipe parameters. | ||
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|Batch size | |'''Batch size''' | ||
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*1-25 wafers at a time | *1-25 wafers at a time | ||
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*1 wafer at a time | *1 wafer at a time | ||
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|Size of substrate | |'''Size of substrate''' | ||
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*4" wafers | *4" wafers | ||
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*6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | *6" or 4" depending on the setup (smaller pieces if you have a carrier wafer) | ||
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|Allowed materials | |'''Allowed materials''' | ||
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*Silicon | *Silicon | ||