Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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{| border="1" cellspacing="0" cellpadding="4" align="center" | {| border="1" cellspacing="0" cellpadding="4" align="center" | ||
! | ! | ||
! Wet Silicon Oxide etch (BHF and SIO Etch) | ! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ||
! RIE | ! RIE | ||
! AOE | ! AOE | ||
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|Etch rate | |Etch rate | ||
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~ | ~75 nm/min (Thermal oxide) in BHF | ||
~90 nm/min (Thermal oxide) in SIO Etch | |||
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. |
Revision as of 10:04, 15 January 2008
Silicon oxide can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the oxide on the surface (backside and front side) of a wafer or for isotrotropic etching. Dry etching etches anisotropic. It etches one side of the wafer at a time and can be used to etch structures with several masking materials.
Etch of silicon oxide can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of wet Silicon Oxide etch and dry etches (RIE and AOE) etch for etching of Silicon Oxide
Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | RIE | AOE | |
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General description |
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Possible masking materials: |
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Etch rate |
~75 nm/min (Thermal oxide) in BHF ~90 nm/min (Thermal oxide) in SIO Etch |
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Batch size |
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Size of substrate |
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Allowed materials |
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