Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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60° - 90°; standard recipe 82° (on SiO<sub>2</sub>) | 60° - 90°; standard recipe 82° (on SiO<sub>2</sub>) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters | ||
|style="background:LightGrey; color:black"|HMDS priming temperature | |style="background:LightGrey; color:black"|HMDS priming temperature | ||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |style="background:WhiteSmoke; color:black" align="center" colspan="2"| | ||
50°C | 50°C | ||
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|style="background:LightGrey; color:black"|HMDS priming time | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
3 min / wafer | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||