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===Equipment performance and process related parameters===
===Equipment performance and process related parameters===


*Recipe 4: baseline prime process with 5 min priming time
*Recipe 5: baseline process without prime


'''Overview of the main recipe:'''
'''Overview of the main recipe:'''
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4. Backfill, return to atmosphere pressure ca. 3. min.
4. Backfill, return to atmosphere pressure ca. 3. min.


Baseline prime process description:
Step                                              Time, min
Vacuum                                        2
Nitrogen pump                              3,5
Heat- up                                        10
Vacuum                                        4,5
HMDS prime                                5
Vacuum chamber exhaust              3
Nitrogen backfill                            3,5


'''Overview of HMDS process:'''


'''Overview of HMDS process:'''
{| border="2" cellspacing="0" cellpadding="2"


{| border="2" cellspacing="0" cellpadding="4" align="left"
!style="background:silver; color:black;" align="center" width="60"|Purpose
!
|style="background:LightGrey; color:black"|
! Pretreatment in HMDS oven
|style="background:WhiteSmoke; color:black"|
|-  
* Promotion of photoresist adhesion
|'''General description'''
* Dehydration of substrates
|Promotion of photoresist adhesion
|-
!style="background:silver; color:black;" align="center" width="60"|Chemical
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
hexamethyldisilizane
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black" align="center"|
82° (on SiO<sub>2</sub>)
|-
|-
|'''Chemical solution'''
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|hexamethyldisilizane
|style="background:LightGrey; color:black"|Process temperature
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
150 °C
|-
|-
|'''Process temperature'''
|style="background:LightGrey; color:black"|Process time
|150 <sup>o</sup>C
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
30 minutes
|-
|-
|'''Process time'''
|style="background:LightGrey; color:black"|Process pressure
|27 min.
|style="background:WhiteSmoke; color:black" align="center"|
??
|-
|-
|'''Batch size'''
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|1-15 wafers at a time, more than 1 batch a time
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
|-
|'''Size of substrate'''
| style="background:LightGrey; color:black"|Allowed materials
|2"-6" wafers
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1-15, multiple batches possible
|-
|}
|}


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