Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]''' | '''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]''' | ||
=Pretreatment= | |||
All surfaces can be divided to hydrophilic or hydrophobic surfaces, where the oxidized surfaces such SiO2 or surface with native oxide formation on Si or Al substrates consider to be hydrophilic and have very bad wetting with hydrophobic resist. | All surfaces can be divided to hydrophilic or hydrophobic surfaces, where the oxidized surfaces such SiO2 or surface with native oxide formation on Si or Al substrates consider to be hydrophilic and have very bad wetting with hydrophobic resist. | ||
Therefore it is very important to do the pretreatment step before the spinning. Here we will give an overview of treatment which Danchip recommend to render the surface hydrophobic. | Therefore it is very important to do the pretreatment step before the spinning. Here we will give an overview of treatment which Danchip recommend to render the surface hydrophobic. | ||
=HMDS= | |||
The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. HMDS treatment leaves a coating of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. | The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. HMDS treatment leaves a coating of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. | ||
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==HMDS oven== | |||
[[Image:HMDS1.JPG|300x300px|thumb|The HMDS oven is placed in Cleanroom 3.]] | [[Image:HMDS1.JPG|300x300px|thumb|The HMDS oven is placed in Cleanroom 3.]] | ||
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[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=54 HMDS oven in LabManager] | [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=54 HMDS oven in LabManager] | ||
== Equipment performance and process related parameters == | ===Equipment performance and process related parameters=== | ||
'''Overview of the main recipe:''' | '''Overview of the main recipe:''' | ||
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==Spin Track 1 + 2== | |||
=BHF= | |||
[[Image:BHF_RR3.jpg|300x300px|thumb|BHF: positioned in cleanroom 3]] | [[Image:BHF_RR3.jpg|300x300px|thumb|BHF: positioned in cleanroom 3]] | ||
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=250C Oven for Pretreatment= | |||
[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|250 degrees oven for pretreatment: positioned in cleanroom 3]] | [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|250 degrees oven for pretreatment: positioned in cleanroom 3]] | ||
The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | ||