Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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[[Image:HMDS.jpg|500x500px|thumb|left|Priming of oxide-forming substrates by HMDS treatment.]] | [[Image:HMDS.jpg|500x500px|thumb|left|Priming of oxide-forming substrates by HMDS treatment.]] | ||
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At Danchip we use Star2000 model from IMTEC to do prime vapor deposition of hexamethyldisilizane(HMDS)under the special conditions: low pressure and hight chamber tempurature. The result of the dehydration bake and HMDS prime is that the wafers become hydrophobic after the treatment. | At Danchip we use Star2000 model from IMTEC to do prime vapor deposition of hexamethyldisilizane(HMDS)under the special conditions: low pressure and hight chamber tempurature. The result of the dehydration bake and HMDS prime is that the wafers become hydrophobic after the treatment. | ||
'''The user manual, user APV, and contact information can be found in LabManager:''' | |||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=54 HMDS oven in LabManager] | |||
== Equipment performance and process related parameters == | |||
'''Overview of the main recipe:''' | '''Overview of the main recipe:''' | ||
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4. Backfill, return to atmosphere pressure ca. 3. min. | 4. Backfill, return to atmosphere pressure ca. 3. min. | ||
'''Overview of HMDS process:''' | |||
Overview of HMDS process: | |||
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