Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

Revision as of 13:17, 7 March 2014

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)
Batch size	Up to 1x4" wafers smaller pieces
Pre-clean	RF Ar clean
Layer thickness	10Å to 1µm
Deposition rate	2Å/s to 10Å/s
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment

@@ Line 7: / Line 7: @@
-{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+{| border="1" cellspacing="0" cellpadding="4"
 |-style="background:silver; color:black"
 !
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
 |-
-| Batch size
+|-style="background:WhiteSmoke; color:black"
+! Batch size
 |
 *Up to 1x4" wafers
 *smaller pieces
 |-
-|-style="background:silver; color:black"
+|-style="background:Lightgrey; color:black"
-| Pre-clean
+! Pre-clean
 |RF Ar clean
 |-
 |-style="background:WhiteSmoke; color:black"
-| Layer thickness
+! Layer thickness
 |10Å to 1µm
 |-
-|-style="background:silver; color:black"
+|-style="background:Lightgrey; color:black"
-| Deposition rate
+! Deposition rate
 |2Å/s to 10Å/s
 |-
+|-style="background:WhiteSmoke; color:black"
+!Allowed materials
+|
+* Silicon oxide
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+* Metals
+|-style="background:Lightgrey; color:black"
+! Comment
+|
 |}