Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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|Low Pressure Chemical Vapour Deposition (LPCVD furnace process) | |Low Pressure Chemical Vapour Deposition (LPCVD furnace process) | ||
|Plasma Enhanced Chemical Vapour Deposition (PECVD process) | |Plasma Enhanced Chemical Vapour Deposition (PECVD process) | ||
| | |Reactive sputtering | ||
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*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | *Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub> | ||
Silicon nitride can be doped with boron, phosphorus or germanium | Silicon nitride can be doped with boron, phosphorus or germanium | ||
| | |Unknown | ||
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*~40 nm - 10 µm | *~40 nm - 10 µm | ||
| | |limited by process time. | ||
Deposition rate is ~1.7nm/min | |||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
| | |Room temperature (higher temperature possible) | ||
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*Less good | *Less good | ||
| | |yes, but amount unknown | ||
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*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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*Deposition on one side of the substrate | |||
*unknown quality | |||
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*Dependent on recipe: ~1-10 Å/min | *Dependent on recipe: ~1-10 Å/min | ||
| | |Unknown | ||
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*Very high compared the LPCVD nitride | *Very high compared the LPCVD nitride | ||
| | |Unknown | ||
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Depending on what PECVD you use | Depending on what PECVD you use | ||
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*Several smaller samples | |||
*1-several 50 mm wafers | |||
*1*100 mm wafers | |||
*1*150 mm wafer | |||
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*Silicon nitrides (with boron, phosphorous and germanium) | *Silicon nitrides (with boron, phosphorous and germanium) | ||
*Pure quartz (fused silica) | *Pure quartz (fused silica) | ||
| | |Any | ||
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|} | |} | ||