Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

Revision as of 09:27, 15 January 2008

Etching of Titatium is done wet at Danchip. We have ?:

	Aluminium Etch 1	Aluminium Etch 2
General description	Etch of pure aluminium	Etch of aluminium + 1.5% Si
Chemical solution	H $_{2}$ O:H $_{3}$ PO $_{4}$ 1:2	PES 77-19-04
Process temperature	50 ^oC	20 ^oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist

@@ Line 1: / Line 1: @@
-==Etching of Aluminium==
+==Etching of Titanium==
-Etching of aluminium is done wet at Danchip. We have two different solutions:
+Etching of Titatium is done wet at Danchip. We have ?:
 # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C