Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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==PECVD Plasma Enhanced Chemical Vapor Deposition== | ==PECVD Plasma Enhanced Chemical Vapor Deposition== | ||
[[image: | [[image:Cluster2x.jpg|200x200px|right|thumb|PECVD1 (part of cluster1) - positioned in cleanroom2]] | ||
[[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3 - positioned in cleanroom1]] | [[image:PECVD3a.jpg|200x200px|right|thumb|PECVD3 - positioned in cleanroom1]] | ||
We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager. | ||