Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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| style="background:LightGrey; color:black"| | | style="background:LightGrey; color:black"|Materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers, Quartz (fused silica) wafers, | *Silicon wafers, Quartz (fused silica) wafers, | ||
**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride | ||
*III-V | *III-V wafers (on special carriers) | ||
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*Silicon wafers, Quarts (fused silica) wafers | *Silicon wafers, Quarts (fused silica) wafers | ||
**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride | ||
*Other material can be allowed if less than 3.9 cm2 is exposed to the plasma | **Layers of Al | ||
**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask! | |||
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