Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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|style="background:LightGrey; color:black"|Deposition of dielectrica  
|style="background:LightGrey; color:black"|Deposition of dielectrica  
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*
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
*PBSG (Phosphorous Boron doped Silica Glass)
*Silicon oxide doped with Germanium
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*Silicon oxide
*Silicon oxide
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|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
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*~10nm - 30µm
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*~10nm - 30µm
*~10nm - 30µm
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|style="background:LightGrey; color:black"|Index of refraction
|style="background:LightGrey; color:black"|Index of refraction
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*~1.4-2.1
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*~1.4-2.1
*~1.4-2.1
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|style="background:LightGrey; color:black"|Step coverage
|style="background:LightGrey; color:black"|Step coverage
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*
*In general: Not so good
*PBSG: Floats at 1000<sup>o</sup>C
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*In general: Not so good
*In general: Not so good
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|style="background:LightGrey; color:black"|Film quality
|style="background:LightGrey; color:black"|Film quality
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*Not so dense film
*Hydrogen will be incorporated in the films
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*Not so dense film
*Not so dense film
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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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*300 <sup>o</sup>C
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*300 <sup>o</sup>C
*300 <sup>o</sup>C
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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*~200-900 mTorr
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*~200-900 mTorr
*~200-900 mTorr
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|style="background:LightGrey; color:black"|Gas flows
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*SiH<math>_4</math>:0-60 sccm
*N<math>_2</math>O:0-3000 sccm
*NH<math>_3</math>:0-1000 sccm
*N<math>_2</math>:0-3000 sccm
*GeH<math>_4</math>:0-6.00 sccm
*5%PH<math>_3</math>:0-99 sccm
*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
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*SiH<math>_4</math>:0-60 sccm
*SiH<math>_4</math>:0-60 sccm

Revision as of 12:24, 27 January 2014

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PECVD Plasma Enhanced Chemical Vapor Deposition

PECVD1 (part of cluster1) - positioned in cleanroom2
PECVD3 - positioned in cleanroom1

We have two (three) PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD1 has been decommissioned and PECVD3 are used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.

PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.

All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.

Recipes on PECVD1(will be removed soon), PECVD2 and PECVD3


Overview of the performance of PECVD thin films and some process related parameters

PECVD PECVD2 PECVD3
Purpose Deposition of dielectrica
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
  • Silicon oxide doped with Germanium
  • Silicon oxide
  • Silicon nitride
  • Silicon oxynitride
  • PBSG (Phosphorous Boron doped Silica Glass)
  • Silicon oxide doped with Germanium
Performance Film thickness
  • ~10nm - 30µm
  • ~10nm - 30µm
Index of refraction
  • ~1.4-2.1
  • ~1.4-2.1
Step coverage
  • In general: Not so good
  • PBSG: Floats at 1000oC
  • In general: Not so good
  • PBSG: Floats at 1000oC
Film quality
  • Not so dense film
  • Hydrogen will be incorporated in the films
  • Not so dense film
  • Hydrogen will be incorporated in the films
Process parameter range Process Temperature
  • 300 oC
  • 300 oC
Process pressure
  • ~200-900 mTorr
  • ~200-900 mTorr
Gas flows
  • SiHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} :0-60 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:0-3000 sccm
  • NHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :0-1000 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} :0-3000 sccm
  • GeHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} :0-6.00 sccm
  • 5%PHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :0-99 sccm
  • 5%BFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6} :0-1000 sccm
  • SiHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} :0-60 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:0-3000 sccm
  • NHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :0-1000 sccm
  • NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} :0-3000 sccm
  • GeHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} :0-6.00 sccm
  • 5%PHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :0-99 sccm
  • 5%BFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6} :0-1000 sccm
Substrates Batch size
  • 1-3 4" wafer per run
  • 1 6" wafer per run
  • Or several smaler pieces
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
    • with layers of silicon oxide or silicon (oxy)nitride
  • Quartz wafers
Material allowed on the substrate
  • Aluminium
  • All metals < 5% of the substrate coverage (ONLY PECVD3!)