Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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@@ Line 32: / Line 32: @@
 |style="background:LightGrey; color:black"|Deposition of dielectrica
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+*Silicon oxide
+*Silicon nitride
+*Silicon oxynitride
+*PBSG (Phosphorous Boron doped Silica Glass)
+*Silicon oxide doped with Germanium
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 *Silicon oxide
@@ Line 43: / Line 47: @@
 |style="background:LightGrey; color:black"|Film thickness
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+*~10nm - 30µm
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 *~10nm - 30µm
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 |style="background:LightGrey; color:black"|Index of refraction
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+*~1.4-2.1
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 *~1.4-2.1
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 |style="background:LightGrey; color:black"|Step coverage
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+*In general: Not so good
+*PBSG: Floats at 1000<sup>o</sup>C
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 *In general: Not so good
@@ Line 62: / Line 67: @@
 |style="background:LightGrey; color:black"|Film quality
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+*Not so dense film
+*Hydrogen will be incorporated in the films
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 *Not so dense film
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 |style="background:LightGrey; color:black"|Process Temperature
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+*300 <sup>o</sup>C
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 *300 <sup>o</sup>C
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 |style="background:LightGrey; color:black"|Process pressure
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+*~200-900 mTorr
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 *~200-900 mTorr
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 |style="background:LightGrey; color:black"|Gas flows
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+*SiH<math>_4</math>:0-60 sccm
+*N<math>_2</math>O:0-3000 sccm
+*NH<math>_3</math>:0-1000 sccm
+*N<math>_2</math>:0-3000 sccm
+*GeH<math>_4</math>:0-6.00 sccm
+*5%PH<math>_3</math>:0-99 sccm
+*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
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 *SiH<math>_4</math>:0-60 sccm