Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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| Layer thickness
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|10Å to 1µm
|10Å to 5000 Å
|10Å to 1 µm
|10Å to 1 µm
|10Å to 1000 Å
|10Å to 1000 Å

Revision as of 15:26, 27 January 2014

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Nickel deposition

Nickel can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) E-beam evaporation (Wordentec) E-beam evaporation (PVD co-sputter/evaporation) Electroplating (Electroplating-Ni)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
  • 1x2" wafer or
  • 1x4" wafer or
  • 1x6" wafer
Pre-clean RF Ar clean RF Ar clean RF Ar clean None
Layer thickness 10Å to 5000 Å 10Å to 1 µm 10Å to 1000 Å A few µm to 1400 µm
Deposition rate 2Å/s to 15Å/s 10Å/s to 15Å/s About 1Å/s About 10 to 250 Å/s
Comment Stress in Wordentec Ni films: study here. Only very thin layers (up to 100nm). Sample must be compatible with plating bath. Seed metal necessary.