Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions
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[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the III-V cleanroom area]] | [[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the III-V cleanroom area]] | ||
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at | The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required. | ||
This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace. | This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace. | ||