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| ==Etching of Aluminium== | | ==Etching of Aluminium== |
| Etching of aluminium is done wet at Danchip. We have two different solutions:
| | At the moment etching of aluminium can only be done wet at Danchip. |
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| # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 at 50 <sup>o</sup>C
| | Please go to the [[Specific Process Knowledge/Etch/Wet Aluminium Etch|''Wet aluminium etch'']] page to see the process information. |
| # Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
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| ===Comparing the two solutions===
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| {| border="1" cellspacing="0" cellpadding="4" align="left"
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| !
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| ! Aluminium Etch 1
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| ! Aluminium Etch 2
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| |-
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| |General description
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| Etch of pure aluminium
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| Etch of aluminium + 1.5% Si
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| |-
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| |Chemical solution
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| |H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2
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| |PES 77-19-04
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| |-
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| |Process temperature
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| |50 <sup>o</sup>C
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| |20 <sup>o</sup>C
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| |-
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| |Possible masking materials:
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| Photoresist (1.5 µm AZ5214E)
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| Photoresist (1.5 µm AZ5214E)
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| |-
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| |Etch rate
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| ~100 nm/min (Pure Al)
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| ~60(??) nm/min
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| |-
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| |Batch size
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| 1-25 wafers at a time
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| 1-25 wafer at a time
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| |-
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| |Size of substrate
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| 4" wafers
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| 4" wafers
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| |-
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| |Allowed materials
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| *Aluminium
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| *Aluminium
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| |-
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| |}
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