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| ==Etching of Aluminium== | | ==Etching of Aluminium== |
| Etching of aluminium is done wet at Danchip. We have two different solutions:
| | At the moment etching of aluminium can only be done wet at Danchip. |
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| # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 at 50 <sup>o</sup>C
| | Please go to the [[Specific Process Knowledge/Etch/Wet Aluminium Etch|''Wet aluminium etch'']] page to see the process information. |
| # Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
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| ===Comparing the two solutions===
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| {| border="1" cellspacing="0" cellpadding="4" align="left"
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| !
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| ! Aluminium Etch 1
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| ! Aluminium Etch 2
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| |-
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| |General description
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| Etch of pure aluminium
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| Etch of aluminium + 1.5% Si
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| |-
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| |Chemical solution
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| |H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2
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| |PES 77-19-04
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| |-
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| |Process temperature
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| |50 <sup>o</sup>C
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| |20 <sup>o</sup>C
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| |-
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| |Possible masking materials:
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| Photoresist (1.5 µm AZ5214E)
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| Photoresist (1.5 µm AZ5214E)
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| |-
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| |Etch rate
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| ~100 nm/min (Pure Al)
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| ~60(??) nm/min
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| |-
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| |Batch size
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| 1-25 wafers at a time
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| 1-25 wafer at a time
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| |-
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| |Size of substrate
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| 4" wafers
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| 4" wafers
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| |-
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| |Allowed materials
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| *Aluminium
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| *Aluminium
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| |-
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| |}
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Revision as of 11:07, 15 January 2008
Etching of Aluminium
At the moment etching of aluminium can only be done wet at Danchip.
Please go to the Wet aluminium etch page to see the process information.
