Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
 |style="background:LightGrey; color:black"|
-|style="background:WhiteSmoke; color:black"|Oxide growth, annealing
+*Oxidation
+*Annealing
+|style="background:WhiteSmoke; color:black"|
+Oxidation:
+*Dry
+*Wet (with bubbler)
+Annealing:
+*N<sub>2</sub>:
+*Argon
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*20-1000 <sup>o</sup>C
+*Up to 1000 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 42: / Line 50: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-25 4" wafer (or 2" wafers) per run
+*1-25 100 mm wafers (or 50 mm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon samples (new from the box or RCA cleaned)
-*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace
+*Silicon samples with metals
+*Silicon sample with polymers (only approved materials)
 |-
 |}