Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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Aluminium Anneal furnace (C4)

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose	Annealing of wafers with aluminium Oxidation of wafers with aluminium
Process parameter range	Process Temperature	400-500 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 5 sccm O₂: 5 sccm
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers)
Substrates	Substrate materials allowed	Silicon wafers with aluminium. Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone

@@ Line 47: / Line 47: @@
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers with alluminium.
+*Silicon wafers with aluminium.
 *Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
 |-
 |}