Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,009 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,009 edits
Line 17: Line 17:
==Overview of the performance of Aluminium Anneal furnace and some process related parameters==
==Overview of the performance of Aluminium Anneal furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Annealing
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Annealing of wafers with aluminium
*Annealing of wafers with aluminium
*Oxidation of wafers with aluminium
*Oxidation of wafers with aluminium
|style="background:WhiteSmoke; color:black"|
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
Line 44: Line 45:
*1-30 100 mm wafers (or 50 mm wafers)  
*1-30 100 mm wafers (or 50 mm wafers)  
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate materiasl allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers with alluminium.
*Silicon wafers with alluminium.
*Wafers are allowed enter the furnace after Al lift-off or after Al etch and resist strip in acetone
*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
|-  
|-  
|}
|}

Revision as of 14:53, 10 January 2014

Feedback to this page: click here

Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom 2

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose
  • Annealing of wafers with aluminium
  • Oxidation of wafers with aluminium
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
  • O2: 5 sccm
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate materiasl allowed
  • Silicon wafers with alluminium.
  • Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/C4_Aluminium_Anneal_furnace&oldid=12327"