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The Drop Shape Analyzer

The Krüss DSA 100S Drop Shape Analyzer will analyze the shapes of drops of liquid on a surface or suspended from a needle in order to calculate the contact angle or the surface tension, respectively.

The user manual, user APV(s), technical information, and contact information can be found in LabManager:

Drop Shape Analyzer in LabManager

An overview of the performance of the Prism Coupler

Purpose	Film thickness measurements and optical characterization of optically transparent thin films	Measurement of film thickness Optical constants
Performance	Thin film materials that can be measured	Film with a refractive index of less than 2.02 and that are transparent to the light in the given wavelength range ex: Silicon Oxide Silicon nitride polymers
	Film thickness range	~1µm to 15 µm
	Film thickness accuracy	±(0.5%+50Å)
	Index accuracy	±0.001
Process parameter range	Wavelength range	Can operate at two different wavelength: 633 nm 1550 nm
Substrates	Batch size	One sample at a time - all sample larger than 5x5 mm²sizes up to 6"
	Substrate material allowed	In principle all materials

@@ Line 16: / Line 16: @@
 [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=240  Drop Shape Analyzer in LabManager]
-== Process information ==
+==An overview of the performance of the Prism Coupler==
-Link to process pages - e.g. one page for each material
+{| border="2" cellspacing="0" cellpadding="10"
+|-
-Example:
+!style="background:silver; color:black;" align="left"|Purpose
-*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
+|style="background:LightGrey; color:black"|Film thickness measurements and optical characterization of optically transparent thin films||style="background:WhiteSmoke; color:black"|
-*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
+*Measurement of film thickness
-*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
+*Optical constants
-*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]
+|-
+!style="background:silver; color:black" align="left"|Performance
-==Equipment performance and process related parameters==
+|style="background:LightGrey; color:black"|Thin film materials that can be measured||style="background:WhiteSmoke; color:black"|
+Film with a refractive index of less than 2.02 and that are transparent to the light in the given wavelength range
+ex:
+*Silicon Oxide
+*Silicon nitride
+*polymers
+|-
+|style="background:silver; color:black"|
+|style="background:LightGrey; color:black"|Film thickness range
+|style="background:WhiteSmoke; color:black"|
+*~1µm to 15 µm
+|-
+|style="background:silver; color:black"|
+|style="background:LightGrey; color:black"|Film thickness accuracy
+|style="background:WhiteSmoke; color:black"|
+*±(0.5%+50Å)
+|-
+|style="background:silver; color:black"|
+|style="background:LightGrey; color:black"|Index accuracy
+|style="background:WhiteSmoke; color:black"|
+*±0.001
+|-
+!style="background:silver; color:black" align="left"|Process parameter range
+|style="background:LightGrey; color:black"|Wavelength range
+|style="background:WhiteSmoke; color:black"|
+Can operate at two different wavelength:
+*633 nm
+*1550 nm
+|-
+!style="background:silver; color:black" align="left"|Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*One sample at a time - all sample larger than 5x5 mm<sup>2</sup>sizes up to 6"
+|-
+|style="background:silver; color:black"|
+| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:WhiteSmoke; color:black"|
+*In principle all materials
+|-
+|}