Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace

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Anneal-bond furnace (C3)

C3 Anneal-bond furnace. Positioned in cleanroom 2

The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (bonded) silicon wafers.

This furnace is the third furnace tube in the furnace C-stack positioned in cleanroom 2.

In this furnace it is allowed oxidize and anneale wafers without doing a RCA clean first. Also bonded wafers comming directly from the EVG NIL (assuming they were clean and not contain any metal when entering EVG NIL). Check the cross contamination information in LabManager.

The user manual, technical information and contact information can be found in LabManager:

Anneal-bond Furnace (C3)

Process knowledge

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of Anneal Bond furnace and some process related parameters

Purpose	Oxidation of Si wafers Annealing of processed wafer, eg. bonded wafers	Oxidation: Dry Wet: with bubbler (water steam + N2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) Wet SiO2: 50 Å to ~5 µm (it takes too long to grow a thicker oxide)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gas flows	N2: 5 sccm O2: 5 sccm
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned) From bonding in EVG NIL directly (assuming they were clean and not contain any metal when entering EVG NIL)