Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Oxidation | |style="background:LightGrey; color:black"| | ||
*Oxidation of Si wafers | |||
*Annealing of processed wafer, eg. bonded wafers | |||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
*Dry | *Dry | ||
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to | *Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) | ||
*Wet SiO<sub>2</sub>: 50 Å to ~5 µm (takes too long to | *Wet SiO<sub>2</sub>: 50 Å to ~5 µm (it takes too long to grow a thicker oxide) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub>:5 sccm | *N<sub>2</sub>: 5 sccm | ||
*O<sub>2</sub>:5 sccm | *O<sub>2</sub>: 5 sccm | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||