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Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

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The Phosphorus Predep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>.
The Phosphorus Predep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>.


A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C2) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart].  
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''