Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions
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==Phosphorus Drive-in furnace (A3)== | ==Phosphorus Drive-in furnace (A3)== | ||
[[Image:A3helstak.jpg|thumb|300x300px| | [[Image:A3helstak.jpg|thumb|300x300px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom 2]] | ||
The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus | The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and for drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Pre-dep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted. | ||
The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | ||
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==Quality Control - Recipe Parameters and Limits== | ==Quality Control - Recipe Parameters and Limits== | ||
{| border="1" cellspacing="2" cellpadding="2" colspan="3" | {| border="1" cellspacing="2" cellpadding="2" colspan="3" | ||
|bgcolor="#98FB98" |'''Quality | |bgcolor="#98FB98" |'''Quality Control (QC) for the processes "Wet1050" and "Dry1050"''' | ||
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*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus | *[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br> | ||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br> | *[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br> | ||
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!QC limits | !QC limits | ||
|Thickness | |Thickness | ||
|Non-uniformity (both single wafer and over the boat) | |Non-uniformity (both over a single wafer | ||
and over the boat) | |||
|- | |- | ||
!Dry1050 | !Dry1050 | ||
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*Drive-in of phosphorous | *Drive-in of phosphorous | ||
*Oxidation of silicon | *Oxidation of silicon | ||
*Oxidation of phosphorous phase | *Oxidation of phosphorous phase layers | ||
*Annealing of the oxide. | *Annealing of the oxide. | ||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1-30 100 mm | *1-30 100 mm wafers (or 50 mm wafers) per run | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (RCA cleaned) | *Silicon wafers (RCA cleaned) | ||
* | *Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace | ||
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|} | |} | ||