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Line 118: |
| |style="background:WhiteSmoke; color:black"| | | |style="background:WhiteSmoke; color:black"| |
| *Silicon wafers (new or RCA cleaned wafers) | | *Silicon wafers (new or RCA cleaned wafers) |
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| |}
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| {| border="2" cellspacing="0" cellpadding="0"
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| |-
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| !style="background:silver; color:black;" align="center"|Purpose
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| |style="background:LightGrey; color:black"|Doping of boron
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| |style="background:WhiteSmoke; color:black"|
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| |-
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| !style="background:silver; color:black" align="center"|Performance
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| |style="background:LightGrey; color:black"|
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| |style="background:WhiteSmoke; color:black"|
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| Look at the process knowlege
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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| |style="background:LightGrey; color:black"|Process Temperature
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| |style="background:WhiteSmoke; color:black"|
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| *900-1150 <sup>o</sup>C
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| |-
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| |style="background:LightGrey; color:black"|Process pressure
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| |style="background:WhiteSmoke; color:black"|
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| *1 atm
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| |-
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| |style="background:LightGrey; color:black"|Gasses on the system
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| |style="background:WhiteSmoke; color:black"|
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| *Ar, N<sub>2</sub>
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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| |style="background:LightGrey; color:black"|Batch size
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| |style="background:WhiteSmoke; color:black"|
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| *1-12 100 nm wafers (or 50 nm wafers) per run
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| |-
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| | style="background:LightGrey; color:black"|Substrate material allowed
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon wafers (only RCA cleaned)
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| *In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
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| |- | | |- |
| |} | | |} |
