Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
+*Dry oxide: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
+*Wet oxide>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 nm wafer (or 50 nm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-12 4" wafer (or 2" wafers) per run
+*1-12 100 nm wafers (or 50 nm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed