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Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions

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The deepetch recipe is designed to etch features (with sizes 2 µm) in silicon down to a depth that ranges from some 50 microns to hundreds of microns. (If you need to etch less, use shallow or Nanoetches.) It is specified to etch a 50 µm wide trench down to a depth of 300 µm on a wafer that has a global/local etch density of 10%.
The deepetch recipe is designed to etch features (with sizes 2 µm) in silicon down to a depth that ranges from some 50 microns to hundreds of microns. (If you need to etch less, use shallow or Nanoetches.) It is specified to etch a 50 µm wide trench down to a depth of 300 µm on a wafer that has a global/local etch density of 10%.
The recipe is given below.
{| border="2" cellpadding="2" cellspacing="1"
|+ '''The deepetch recipe'''
|-
! colspan="2" align="center"| Common parameters
! colspan="3" align="center"| Multiplexed parameters
|-
! Parameter 
! Setting
! Parameter
! Etch
! Passivation
|-
! Temperature
| 20<sup>o</sup>C
! SF<sub>6</sub> Flow
| 230 sccm
| 0 sccm
|-
! No. of cycles
| 250
! O<sub>2</sub> Flow
| 23 sccm
| 0 sccm
|-
! Process time
| 54:10 mins
! C<sub>4</sub>F<sub>8</sub> Flow
| 0 sccm
| 120 sccm
|-
! APC mode
| manual
! RF coil
| 2800 W
| 1000 W
|-
! APC setting
| 87.7 %
! RF Platen
| 19 W
| 0 W
|-
!
|
! Cycle time
| 8 s
| 5 s
|}


<gallery caption="Standardization images of the deepetch recipe" widths="300px" heights="300px" perrow="2">
<gallery caption="Standardization images of the deepetch recipe" widths="300px" heights="300px" perrow="2">