Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE

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The Bosch process: Etching of silicon

The Bosch process uses alternation between an etch cycle and a passivation cycle. Introducing a passivation step in an etch process is very beneficial for the control of the angle of the sidewalls in the etch process because it allows us to cover them with a protective layer that suppresses the isotropic etching. Combined with the high plasma density in the ICP chamber, the excellent sidewall control enables us to etch high aspect ratio structures in silicon with very high etch rates.

In the case of the silicon etching on the ASE, an etch phase with SF₆ and O₂ alternates with a passivation phase with C₄F₈.

The two standard silicon etch recipes

Two recipes have been optimized for the ASE. Their specification is on a 10 % etch load wafer with trenches.

• Shallolr: The shallow etch process will etch a 2 µm opening down to make a 20 µm trench.
• Deepetch: The deep etch process will etch a 50 µm opening down to make a 300 µm trench.

The standardization procedure on the ASE covers these two etches.

Quality control procedure on the ASE

Quality Control (QC) for ASE

The QC procedure for RIE1 and RIE2 The newest QC data for RIE1 The newest QC data for RIE2 QC Recipe: The shallolr recipe Common parameters Multiplexed parameters Parameter Setting Parameter Etch Passivation Temperature 10oC SF6 Flow 260 sccm 0 sccm No. of cycles 31 O2 Flow 26 sccm 0 sccm Process time 5:56 mins C4F8 Flow 0 sccm 120 sccm APC mode manual RF coil 2800 W 1000 W APC setting 86.8 % RF Platen 16 W 0 W Cycle time 6.5 s 5 s QC limits RIE1 RIE2 Etch rate in Si 0.2 - 0.6 µm/min 0.2 - 0.6 µm/min Non-uniformity 2 - 5 % 2 - 5 %

Recipes on the ASE

Shallolr

The shallolr recipe is designed to etch features (with sizes above 1 µm) in silicon down to a depth that ranges from a few microns to some 50 microns. (If you need to etch deeper use Deepetch or more shallow, see Nanoetches.) It is specified to etch a 2 µm wide trench down to a depth of 20 µm on a wafer that has a global/local etch opening density of 10%.

The recipe is given below.

The shallolr recipe

Common parameters		Multiplexed parameters
Parameter	Setting	Parameter	Etch	Passivation
Temperature	10oC	SF6 Flow	260 sccm	0 sccm
No. of cycles	31	O2 Flow	26 sccm	0 sccm
Process time	5:56 mins	C4F8 Flow	0 sccm	120 sccm
APC mode	manual	RF coil	2800 W	1000 W
APC setting	86.8 %	RF Platen	16 W	0 W
		Cycle time	6.5 s	5 s

The process runs for 31 cycles (5:56 mins). The fact that it's Bosch process is clear from the scallops on the sidewalls - one should be able to count 31 of them.

• Standardization images of the shallolr recipe
• 
  The profile of a 2 µm trench
• 
  The profile of a 50 µm trench

The process is designed to reach 20 µm down in a 2 µm trench but as is clear from the image of the corresponding 50 µm trench, this one is etched deeper. The reason is the so called Aspect Ratio Dependent Etching or ARDE: See below.

Deepetch

The deepetch recipe is designed to etch features (with sizes 2 µm) in silicon down to a depth that ranges from some 50 microns to hundreds of microns. (If you need to etch less, use shallow or Nanoetches.) It is specified to etch a 50 µm wide trench down to a depth of 300 µm on a wafer that has a global/local etch density of 10%.

The recipe is given below.

The deepetch recipe

Common parameters		Multiplexed parameters
Parameter	Setting	Parameter	Etch	Passivation
Temperature	20oC	SF6 Flow	230 sccm	0 sccm
No. of cycles	250	O2 Flow	23 sccm	0 sccm
Process time	54:10 mins	C4F8 Flow	0 sccm	120 sccm
APC mode	manual	RF coil	2800 W	1000 W
APC setting	87.7 %	RF Platen	19 W	0 W
		Cycle time	8 s	5 s

• Standardization images of the deepetch recipe
• 
  The profile of a 2 µm trench
• 
  The profile of a 50 µm trench

As is clear from the two images ARDE also plays a role in this case: The 2 µm trench (widened to about 5-6 µm because of undercut/underetching) is only etched 150 µm.

Process development

Etch of nano sized structures

Three different examples of etch are shown here. The masking material was zep520A (80 nm).

Vertical sidewalls	Low ARDE	Positive tappered side walls
Etch cycle SF6 flow [sccm]:50 C4F8 flow [sccm]:100 Pressure [mTorr] 20 Coil power [W]: 350 Platen power [W]: 30 Cycle Time [s]: 5 Dep. Cycle C4F8 flow [sccm]: 100 Pressure [mTorr]: 20 Coil power [W]: 500 Platen power [W]: 0 Cycle Time [s]: 3 Temperature [Deg. C] 20 Results: Etch rate of 100nm lines: 146nm/min @etch time: 1:36min.	Etch cycle SF6 flow [sccm]:50 C4F8 flow [sccm]:100 Pressure [mTorr] 10 Coil power [W]: 350 Platen power [W]: 30 Cycle Time [s]: 5 Dep. Cycle C4F8 flow [sccm]: 100 Pressure [mTorr]: 10 Coil power [W]: 500 Platen power [W]: 0 Cycle Time [s]: 3 Temperature [Deg. C] -10 Results: Etch rate of 100nm lines: 131nm/min @etch time: 1:36min.	Etch cycle SF6 flow [sccm]:50 C4F8 flow [sccm]:100 Pressure [mTorr] 10 Coil power [W]: 350 Platen power [W]: 10 Cycle Time [s]: 5 Dep. Cycle C4F8 flow [sccm]: 100 Pressure [mTorr]: 10 Coil power [W]: 500 Platen power [W]: 0 Cycle Time [s]: 3 Temperature [Deg. C] 20 Results: Etch rate of 100nm lines: 209nm/min @etch time: 2:56min.