Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Mdyma (talk | contribs)
danchip
584 edits
Mdyma (talk | contribs)
danchip
584 edits
Line 63: Line 63:


<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
==Comparison of the seven oxidation furnaces==
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
|
!
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace| A1: Boron Drive-in]]
!
[[Specific_Process_Knowledge/Thermal_Process/C2_Gate_Oxide_furnace| A2: Gate Oxide]]
!
[[Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace| A3: Phosphorous Drive-in]]
!
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX| D1: APOX]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
|Oxidation of gate-oxide and other especially clean oxides.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.
|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Oxidation and annealing of almost materials on silicon wafer.
|-
|-
|-style="background:LightGrey; color:black"
!Oxidation method
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Steamer
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bobbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|-
|-
|-style="background:WhiteSmoke; color:black"
!Annealing gas
|
*N<sub>2</sub>
*Ar
|
*N<sub>2</sub>
|
*N<sub>2</sub>
|
*N<sub>2</sub>
|
*N<sub>2</sub>
|
*N<sub>2</sub>
|
*N<sub>2</sub>
*Ar
|-
|-
|-style="background:LightGrey; color:black"
!Process temperatur
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*1075 <sup>o</sup>C
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
|-
|-
|-style="background:WhiteSmoke; color:black"
!Substrate and Batch size
|
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
Including one test wafer
|
*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
*1-150 100 mm wafers
|
*Small samples on carrier wafer, horizontal
*1-25 50 mm wafers
*1-25 100 mm wafers, vertical and horizontal
|-
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
All wafers have to be RCA cleaned.
Except for Boron pre-dep wafer from furnace A1.
|
All wafers have to be RCA cleaned.
|
All wafers have to be RCA cleaned.
Except for Phosphorous pre-dep wafers from furnace A4.
|
All processed wafers have to be RCA cleaned.
Except for wafers from LPCVD furnace and PECVD1.
|
All wafers have to be RCA cleaned.
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
|
Only new wafers
|
Almost all meterials
|-
|}
<br clear="all" />

Revision as of 09:58, 18 March 2014

Feedback to this page: click here

Annealing

At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.

  • Anneal with N2 can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
  • Wet anneal with H2O in a bubbler can be done in furnaces:C1 and C3.

Comparison of the seven annealing equipments

A1
Boron drive-in 		A3
Phosphorous drive-in 		C1
Anneal oxide 		C3
Anneal bond 		C4
Anneal aluminium 		Nobel furnace RTP
General description Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation. Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation. Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers. Annealing and oxidation of wafers from NIL. Annealing of wafers with aluminium. Annealing and oxidation of any material. Rapid thermal annealing.
Annealing with N2 x x x x x x x
Wet annealing with bubler (water steam + N2) . . x x . . .
Process temperature [ oC ] 800-1150 800-1150 800-1150 800-1150 800-1150 22-1000oC 22-1000oC
Batch size max. 30 wafers of 4" or 2" max. 30 4" wafers or 2" wafers max. 30 wafers of 6",4" or 2" max. 30 4" wafers or 2" wafers max. 30 4" wafers or 2" wafers 30x4" or small pieces 1x4" or small pieces
Which wafers are allowed to enter the furnace: A1
Boron drive-in 		A3
Phosphorous drive-in 		C1
Anneal oxide 		C3
Anneal bond 		C4
Anneal aluminium 		Nobel RTP
New clean* Si wafers 4" (6" in C1) . . . x x x x
RCA clean** Si wafers with no history of Metals on x x x x x x x
From Predep furnace directly (e.g. incl. Predep HF**) From A2 From A4 x x x x x
Wafers directly from PECVD1 . . x x x x x
Wafers directly from NIL bonding . . . x x x x
Wafers with aluminium . . . . x x .
wafers with other metals . . . . x .
wafers with III-V materials x

*New clean: only right from the new clean box. It is not allowed to put them in another box first.

**These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.

Comparison of the seven oxidation furnaces

A1: Boron Drive-in

A2: Gate Oxide

A3: Phosphorous Drive-in

C1: Anneal Oxide

C3: Anneal Bond

D1: APOX

Noble furnace

Generel description Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation. Oxidation of gate-oxide and other especially clean oxides. Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1. Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Oxidation of very thick oxides, thickness higher than 4 µm. Oxidation and annealing of almost materials on silicon wafer.
Oxidation method
  • Dry: 5 SLM O2
  • Wet: Torch
  • Dry: 5 SLM O2
  • Dry: 5 SLM O2
  • Wet: Torch
  • Dry: 5 SLM O2
  • Wet: Steamer
  • Dry: 5 SLM O2
  • Wet: Bobbler
  • Dry: 5 SLM O2
  • Wet: Bubbler
  • Dry: 5 SLM O2
  • Wet: Bubbler
Annealing gas
  • N2
  • Ar
  • N2
  • N2
  • N2
  • N2
  • N2
  • N2
  • Ar
Process temperatur
  • 900 oC - 1150 oC
  • 900 oC - 1150 oC
  • 900 oC - 1150 oC
  • 700 oC - 1100 oC
  • 900 oC - 1150 oC
  • 1075 oC
  • 20 oC - 1000 oC
Substrate and Batch size
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers

Including one test wafer

  • 1-30 50 mm wafers
  • 1-30 100 mm wafers

Including one test wafer

  • 1-30 50 mm wafers
  • 1-30 100 mm wafers

Including one test wafer

  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers

Including one test wafer

  • Small samples on carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers

Including one test wafer

  • 1-150 100 mm wafers
  • Small samples on carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
Allowed materials

All wafers have to be RCA cleaned. Except for Boron pre-dep wafer from furnace A1.

All wafers have to be RCA cleaned.

All wafers have to be RCA cleaned. Except for Phosphorous pre-dep wafers from furnace A4.

All processed wafers have to be RCA cleaned. Except for wafers from LPCVD furnace and PECVD1.

All wafers have to be RCA cleaned. Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.

Only new wafers

Almost all meterials


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Annealing&oldid=13836"