Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 <nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
+==Comparison of the seven oxidation furnaces==
+{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
+|-
+|-
+|-style="background:silver; color:black"
+|
+!
+[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace| A1: Boron Drive-in]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/C2_Gate_Oxide_furnace| A2: Gate Oxide]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace| A3: Phosphorous Drive-in]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX| D1: APOX]]
+!
+[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Generel description
+|Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
+|Oxidation of gate-oxide and other especially clean oxides.
+|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
+|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.
+|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
+|Oxidation of very thick oxides, thickness higher than 4 µm.
+|Oxidation and annealing of almost materials on silicon wafer.
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Oxidation method
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Torch
+|
+*Dry: 5 SLM O<sub>2</sub>
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Torch
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Steamer
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Bobbler
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Bubbler
+|
+*Dry: 5 SLM O<sub>2</sub>
+*Wet: Bubbler
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Annealing gas
+|
+*N<sub>2</sub>
+*Ar
+|
+*N<sub>2</sub>
+|
+*N<sub>2</sub>
+|
+*N<sub>2</sub>
+|
+*N<sub>2</sub>
+|
+*N<sub>2</sub>
+|
+*N<sub>2</sub>
+*Ar
+|-
+|-
+|-style="background:LightGrey; color:black"
+!Process temperatur
+|
+*900 <sup>o</sup>C - 1150 <sup>o</sup>C
+|
+*900 <sup>o</sup>C - 1150 <sup>o</sup>C
+|
+*900 <sup>o</sup>C - 1150 <sup>o</sup>C
+|
+*700 <sup>o</sup>C - 1100 <sup>o</sup>C
+|
+*900 <sup>o</sup>C - 1150 <sup>o</sup>C
+|
+*1075 <sup>o</sup>C
+|
+*20 <sup>o</sup>C - 1000 <sup>o</sup>C
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Substrate and Batch size
+|
+*1-30 50 mm wafers
+*1-30 100 mm wafers
+Including one test wafer
+|
+*1-30 50 mm wafers
+*1-30 100 mm wafers
+Including one test wafer
+|
+*1-30 50 mm wafers
+*1-30 100 mm wafers
+Including one test wafer
+|
+*1-30 50 mm wafers
+*1-30 100 mm wafers
+*1-30 150 mm wafers
+Including one test wafer
+|
+*Small samples on carrier wafer, horizontal
+*1-30 50 mm wafers
+*1-30 100 mm wafers
+Including one test wafer
+|
+*1-150 100 mm wafers
+|
+*Small samples on carrier wafer, horizontal
+*1-25 50 mm wafers
+*1-25 100 mm wafers, vertical and horizontal
+|-
+|-
+|-style="background:LightGrey; color:black"
+!'''Allowed materials'''
+|
+All wafers have to be RCA cleaned.
+Except for Boron pre-dep wafer from furnace A1.
+|
+All wafers have to be RCA cleaned.
+|
+All wafers have to be RCA cleaned.
+Except for Phosphorous pre-dep wafers from furnace A4.
+|
+All processed wafers have to be RCA cleaned.
+Except for wafers from LPCVD furnace and PECVD1.
+|
+All wafers have to be RCA cleaned.
+Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
+|
+Only new wafers
+|
+Almost all meterials
+|-
+|}
+<br clear="all" />